unisonic technologies co., ltd 2sa1774 pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r221-011.c general purpose transistor ? features * excellent h fe linearity * complements the utc 2sc4617 sot-23 1 2 3 1 2 3 sot-523 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2sa1774l-x-ae3-r 2sa1774g-x-ae3-r sot-23 e b c tape reel 2SA1774L-X-AN3-R 2sa1774g-x-an3-r sot-523 e b c tape reel note: pin assignment: e: emitter b: base c: collector ? marking
2sa1774 pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r221-011.c ? absolute maximum rating (t a =25 ) parameter symbol ratings unit collector-base voltage v cbo -60 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current i c -0.15 a collector power dissipation sot-23 p c 0.22 w sot-523 0.15 junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. the device is guaranteed to meet performance specification within 0 ~70 operating temperature range and assured by design from ?20 ~85 . ? electrical characteristics (t a =25 , unless otherwise specified.) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -50a -60 v collector-emitter breakdown voltage bv ceo i c = -1ma -50 v emitter-base breakdown voltage bv ebo i e = -50a -6 v collector cutoff current i cbo v cb = -60v -0.1 a emitter cutoff current i ebo v eb = -6v -0.1 a dc current transfer ratio h fe v ce = -6v, i c = -1ma 120 560 collector-emitter satu ration voltage v ce ( sat ) i c =-50ma, i b = ? 5ma -0.5 v transition frequency f t v ce = -12v, i e =2ma, f=100mhz 140 mhz output capacitance c ob v cb = -12v, i e =0a, f=1mhz 4.0 5.0 pf ? classification of h fe1 rank q r s range 120 ~ 270 180 ~ 390 270 ~ 560
2sa1774 pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r221-011.c ? typical characteristics h fe ,dc current gain collector-emitter saturation voltage, v ce(sat) (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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